ty p-channel mosfet RSF010P05 ? structure ? dimensions (unit : mm) ? features 1) low on-resistance. 2) small high power package. 3) low voltage drive.(4v) ? application switching ? packaging specifications ? inner circuit package taping code tl basic ordering unit (pieces) 3000 RSF010P05 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss ? 45 v gate-source voltage v gss ? 20 v continuous i d ? 1a pulsed i dp ? 4a continuous i s ? 0.6 a pulsed i sp ? 4a power dissipation p d 0.8 w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 156 ? c / w *mounted on a ceramic board. parameter type source current (body diode) drain current parameter * *2 *1 *1 *2 *1 abbreviated symbol : su (1) gate (2) source (3) drain ? 1 esd protection diode ? 2 body diode tumt3 0.2max. ? 2 ? 1 (3) (1) (2) 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss ? 45 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss -- ? 1 ? av ds = ? 45v, v gs =0v gate threshold voltage v gs (th) ? 1.0 - ? 2.5 v v ds = ? 10v, i d = ? 1ma - 330 460 i d = ? 1a, v gs = ? 10v - 450 630 i d = ? 0.5a, v gs = ? 4.5v - 490 690 i d = ? 0.5a, v gs = ? 4v forward transfer admittance l y fs l1 - - si d = ? 1a, v ds = ? 10v input capacitance c iss - 160 - pf v ds = ? 10v output capacitance c oss - 40 - pf v gs =0v reverse transfer capacitance c rss - 17 - pf f=1mhz turn-on delay time t d(on) -6-nsi d = ? 0.5a, v dd ? 25v rise time t r -4-nsv gs = ? 10v turn-off delay time t d(off) - 18 - ns r l =50 ? fall time t f -6-nsr g =10 ? total gate charge q g - 2.3 - nc i d = ? 1a gate-source charge q gs - 0.9 - nc v dd ? 25v gate-drain charge q gd - 0.6 - nc v gs = ? 5v *pulsed ? body diode characteristics (source-drain) (ta = 25 ? c) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 1a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * ******** * * * 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com RSF010P05 product specification www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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